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标题: 【钟英辉】郑州大学物理工程学院研究生导师介绍 [打印本页]

作者: 信息发布    时间: 2017-2-27 19:00
标题: 【钟英辉】郑州大学物理工程学院研究生导师介绍

  姓名:钟英辉  职称:副教授 最终学历:博士

  联系电话:15838376813电子邮箱:zhongyinghui@zzu.edu.cn

  1.个人经历:

  钟英辉,2008年毕业于郑州大学物理工程学院,获工学学士学位。2013年毕业于西安电子科技大学微电子学院,获微电子学与固体电子学博士学位。2010年-2012年,中国科学院微电子研究所联合培养博士。2014年1月初聘郑州大学物理工程学院讲师。2014年8月,获得硕士研究生导师资格。2015年晋升郑州大学校聘副教授职称。

  2.研究方向:

  高频器件模拟仿真、器件工艺研发、等效模型建立、毫米波集成电路设计、毫米波器件辐照效应等。

  3.代表性成果:

  [1]主持国家自然科学基金青年基金项目一项,项目名称:InP基HEMT辐照效应研究,起止时间:2015年1月-2017年12月;

  [2]主持郑州大学优秀青年教师发展基金项目一项,起止时间:2016年1月-2018年12月;

  [3]河南省博士后科研二等资助;

  4.代表性论文:

  [1] Sun Shuxiang, Ji Huifang, Yao Huijuan, Li Sheng, Jin Zhi, Ding Peng, Zhong Yinghui*. Physical modeling of direct current and radio frequency characteristics for InP-based InAlAs/InGaAs HEMTs. Chinese Physics B, 25(10): 108501, 2016. (通讯作者)

  [2] Zhong Yinghui, Zang Huaping, Jin Zhi, et al. Comparison of single-step and two-step EBL T-gates fabrication techniques for InP-Based HEMT. Chinese Journal of Electronics, 25(2): 199-202, 2016.

  [3] Zhong Yinghui, Zang Huaping, Wang Haili, et al. T-gate fabrication of InP-Based HEMTs using PMGI/ZEP520A/PMGI/ZEP520A stacked resist. Chinese Journal of Electronics, 25(3): 448-452, 2016.

  [4] Zhong Yinghui, Yang Jie, Li Xinjian, et al. Impact of the Silicon-nitride Passivation Film Thickness on the Characteristics of InAlAs/InGaAs InP-based HEMTs. Journal of the Korean Physical Society, 66(6): 1020-1024, 2015.

  [5] Zhong Yinghui, Li Kaikai, Li Xinjian, et al. A W-band high-gain and low-noise amplifier MMIC using InP-based HEMTs. Journal of Infrared and Millimeter Waves, 34(6): 668-672, 2015.

  [6] Zhong Yinghui, Wang Xiantai, Su Yongbo, et al. High performance InP-based In0.52Al0.48As /In0.53Ga0.47As HEMTs with extrinsic transconductance of 1052 mS/mm. Journal of Infrared and Millimeter Waves, 32(3): 193-197, 2013.

  [7] Zhong Yinghui, Zhang Yuming, Zhang Yimen, et al. 0.15 μm T-gate In0.52Al0.48As /In0.53Ga0.47As InP-based HEMT with fmax of 390 GHz. Chinese Physics B, 22(12): 128503-5, 2013.

  [8] Zhong Yinghui, Su Yongbo, Jin Zhi, et al. An InGaAs/InP W-band dynamic frequency divider. Journal of Infrared and Millimeter Waves, 31(5): 393-398, 2012.

  [9] Zhong Yinghui, Zhang Yuming, Zhang Yimen, et al. A W-band two-stage cascode amplifier with gain of 25.7 dB. Journal of Semiconductors, 34(12): 125003-5, 2013.

  [10] Zhong Yinghui, Wang Xiantai, Su Yongbo, et al. An 88 nm gate-length In0.53Ga0.47As/ In0.52Al0.48As InP-based HEMT with fmax of 201 GHz. Journal of Semiconductors, 33(7): 39-42, 2012.

  [11] Zhong Yinghui, Wang Xiantai, Su Yongbo, et al. Impact of the lateral width of the gate recess on the DC and RF characteristics of InAlAs/InGaAs HEMTs. Journal of Semiconductors, 33(5): 61-65, 2012.

  [12] Zhong Yinghui, Zhang Yuming, Zhang Yimen, et al. A W-band two-stage cascode amplifier with small-signal gain of 25.7 dB. 2013 IEEE International Conference of Electron Devices and Solid-State Circuits, 3-5 June 2013, Hong Kong, China, 2013.

  [13] Zhong Yinghui, Wang Xiantai, Su Yongbo, Cao Yuxiong, et al. Sub 100 nm In0.53Ga0.47As/In0.52Al0.48As InP-based HEMT with fT=204 GHz, fmax=352 GHz, and gm,max=918 mS/mm. 2011 International Symposium on Radio-Frequency Integration Technology (RFIT), Nov. 30 2011-Dec. 2 2011, pp: 213-216, Beijing, China, 2011.

  [14] 钟英辉,张玉明,张义门等. W波段InP HEMT低噪声放大器, 第十七届全国化合物半导体材料微波器件和光电器件学术会议, 2012.11.07-10, pp: 326-329, 开封, 2012.

  [15] Wang Wen, Zhong Yinghui, Li Dongxue, et al. Thermal behavior of Ag Micro/Nano Wires formed by low-temperature sintering of Ag nanoparticles. Journal of Electronic Materials, 44(11): 4920-4927, 2015.

  [16] 王显泰,钟英辉,金智,汪宁. 一种采用单次电子束曝光制备T型栅的方法, 2014.1, 中国, 201110441236.5




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