1. ZQ Yao, SL Liu, L Zhang, B He, A Kumar, X Jiang, WJ Zhang, G Shao. “Room temperature fabrication of p-channel Cu2O thin-film transistors on flexible polyethylene terephthalate substrates.” Appl. Phys. Lett. 101 (2012) 042114.
2. ZQ Yao, B He, L Zhang, CQ Zhuang, TW Ng, SL Liu, M Vogel, A Kumar, WJ Zhang, CS Lee, ST Lee, X Jiang. “Energy band engineering and controlled p-type conductivity of CuAlO2 thin films by nonisovalent Cu-O alloying.” Appl. Phys. Lett. 100 (2012) 062102.
3. B He, WJ Zhang, ZQ Yao, YM Chong, Y Yang, Q Ye, XJ Pan, JA Zapien, I Bello, ST Lee, I Gerhards, H Zutz, H Hofs?ss. “p-type conduction in beryllium-implanted hexagonal boron nitride films. ” Appl. Phys. Lett. 95 (2009) 252106.
4. WF Zhang, JS Jie, LB Luo, GD Yuan, ZB He, ZQ Yao, ZH Chen, CS Lee, WJ Zhang, ST Lee. “Hysteresis in In2O3:Zn nanowire field-effect transistor and its application as a nonvolatile memory device.” Appl. Phys. Lett. 93 (2008) 183111.
5. YS Zou, Y Yang, YM Chong, Q Ye, B He, ZQ Yao, WJ Zhang, ST Lee, Y Cai, HS Chu. “Chemical vapor deposition of diamond films on patterned GaN substrates via a thin silicon nitride protective layer.” Crystal Growth & Design 8 (2008) 1770.
6. ZQ Yao, X Fan, B He, WJ Zhang, I Bello, ST Lee, XM Meng. “Study of in-plane orientation of epitaxial AlN films grown on (111) SrTiO3.” Appl. Phys. Lett. 92 (2008) 241911.
7. ZQ Yao, YQ Li, JX Tang, WJ Zhang, ST Lee. “Growth and photoluminescence studies of AlN thin films with different orientation degrees.” Diamond Relat. & Mat. 17 (2008) 1785.
8. ZQ Yao, YS Zou, Y Yang, WJ Zhang, ST Lee, YZ Zhang, ZZ Ye, “Epitaxial growth and structural analysis of AlN/GaN heterostructures.” Appl. Phys. Lett. 91 (2007) 221912.
9. ZQ Yao, Q Ye, YQ Li, YS Zou, WJ Zhang, ST Lee. “Microstructure analysis of c-axis oriented AlN thin films by high resolution TEM (HRTEM).” Appl. Phys. Lett. 90 (2007) 121907.
10. TF Chung, LB Luo, ZB He, YH Leung, I Shafiq, ZQ Yao, ST Lee. “Selective growth of catalyst-free ZnO nanowire arrays on Al:ZnO for device application.” Appl. Phys. Lett. 91 (2007) 233212.